MOSFET de putere N-canal TO263 , 60V 60A 89W , AP9972GS-HF-3

Descriere:

MOSFET N-channel enhancement-mode AP9972GS-HF-3, varianta SMD in pachet TO-263 (exista si AP9972GP-HF-3 in TO-220 prin gaurit). Ideal pentru aplicatii cu comutare rapida si putere moderata.

Specificatii electrice principale (@ Tj = 25°C):

• Tensiune V_DSS: 60 V

• Curent continuu I_D: 60 A @ T_C = 25°C (38 A @ 100°C)

• Rezistenta R_DS(on): 18 mΩ @ V_GS = 10 V, ID = 35 A; 22 mΩ @ V_GS = 4.5 V, ID = 25 A

• Curent pulsatoriu I_DM: aprox. 230 A (puls scurt)

• Putere disipata max.: 89 W @ T_C = 25°C

• V_GS(max) permisa: ±25 V

• V_GS(th): 1…3 V (ID = 250 µA)

• Transconductanta g_fs: ≈ 55 S @ V_DS=10 V, ID=35 A

Performante dinamice:

• Incarcare totala porti Q_g: 32–51 nC (~32 nC @ V_GS =10 V, ID = 35 A)

• Q_gs / Q_gd (element Miller): ~20 nC (@ V_GS = 4.5 V)

• Capacitante interne:

  • C_iss: ~3,170–5,070 pF (V_GS=0 V)

  • C_oss: ~280 pF @ V_DS = 25 V

  • C_rss: ~230 pF

• Timpuri comutare:

  • t_d(on): ≈ 11 ns

  • t_rise: ≈ 58 ns

  • t_d(off): ≈ 45 ns

  • t_fall: ≈ 80 ns

Date termice si mediu:

• Temperatura operare T_J: –55°C … +150°C

• Rezistenta termica Rθ_JC (juntie–carcasa): ~1.4°C/W

• Rezistenta termica Rθ_JA (juntie–ambient): ~40°C/W (montaj PCB), pana la 62°C/W fara disipare

Aplicatii tipice:

• Convertoare DC/DC cu tensiuni sub 60 V

• Surse comutate, control PWM, drivere motoare compacte

• Circuite SMD cu putere moderata (≤ 60 A continuu, ≤ 89 W in montaj corect termic)

• Comutare rapida unde este important Q_g redus si raspuns dinamic bun